JPS6088468A - 半導体集積装置の製造方法 - Google Patents

半導体集積装置の製造方法

Info

Publication number
JPS6088468A
JPS6088468A JP59147702A JP14770284A JPS6088468A JP S6088468 A JPS6088468 A JP S6088468A JP 59147702 A JP59147702 A JP 59147702A JP 14770284 A JP14770284 A JP 14770284A JP S6088468 A JPS6088468 A JP S6088468A
Authority
JP
Japan
Prior art keywords
layer
oxide
region
mask
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59147702A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0373139B2 (en]
Inventor
シヤーシ・ダール・マラヴイヤ
グルマコンダ・ラマサミエンガー・スリニヴアサン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6088468A publication Critical patent/JPS6088468A/ja
Publication of JPH0373139B2 publication Critical patent/JPH0373139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP59147702A 1983-10-13 1984-07-18 半導体集積装置の製造方法 Granted JPS6088468A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54162683A 1983-10-13 1983-10-13
US541626 1983-10-13

Publications (2)

Publication Number Publication Date
JPS6088468A true JPS6088468A (ja) 1985-05-18
JPH0373139B2 JPH0373139B2 (en]) 1991-11-20

Family

ID=24160384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59147702A Granted JPS6088468A (ja) 1983-10-13 1984-07-18 半導体集積装置の製造方法

Country Status (3)

Country Link
EP (1) EP0137195B1 (en])
JP (1) JPS6088468A (en])
DE (1) DE3468782D1 (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641022B1 (en) * 1993-08-31 2006-05-17 STMicroelectronics, Inc. Isolation structure and method for making same
CN110061066B (zh) * 2019-04-30 2024-02-09 苏州固锝电子股份有限公司 一种浅沟槽的电极同侧二极管芯片的制造工艺
CN118398485B (zh) * 2024-06-27 2024-09-13 合肥晶合集成电路股份有限公司 半导体器件的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220444A (ja) * 1982-06-16 1983-12-22 Toshiba Corp 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372063A (en) * 1964-12-22 1968-03-05 Hitachi Ltd Method for manufacturing at least one electrically isolated region of a semiconductive material
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure
US4141765A (en) * 1975-02-17 1979-02-27 Siemens Aktiengesellschaft Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
US3972754A (en) * 1975-05-30 1976-08-03 Ibm Corporation Method for forming dielectric isolation in integrated circuits
US4394196A (en) * 1980-07-16 1983-07-19 Tokyo Shibaura Denki Kabushiki Kaisha Method of etching, refilling and etching dielectric grooves for isolating micron size device regions
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
DE3380104D1 (en) * 1982-08-24 1989-07-27 Nippon Telegraph & Telephone Substrate structure of semiconductor device and method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220444A (ja) * 1982-06-16 1983-12-22 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0373139B2 (en]) 1991-11-20
EP0137195A1 (en) 1985-04-17
EP0137195B1 (en) 1988-01-13
DE3468782D1 (en) 1988-02-18

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